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SENSITRON SEMICONDUCTOR
TECHNICAL DATA Datasheet 4118, Rev. C
SPM6M080-010D
Three-Phase MOSFET BRIDGE, With Gate Driver and Optical Isolation
DESCRIPTION: A 100 VOLT, 80 AMP, THREE PHASE MOSFET BRIDGE
ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE
(Tj=250C UNLESS OTHERWISE SPECIFIED) SYMBOL MIN TYP MAX UNIT
PARAMETER
MOSFET SPECIFICATIONS
Drain-to-Source Breakdown Voltage ID = 500 µA, VGS = 0V Continuous Drain Current TC = 25 OC
O
BVDSS ID IDM VGS IGSS ICSS
100 -
-
80 70 200 +/-20 +/- 200
V A A V nA
TC = 90 C Pulsed Drain Current, Pulse Width limited to 1 msec Gate to Source Voltage Gate- Source Leakage Current , VGE = +/-20V
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