Datasheet4U Logo Datasheet4U.com

SPM6M020-060D - Three-Phase MOSFET BRIDGE

General Description

Pin Number 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 Function Isolated Input for High-side IGBT of Phase A Return for Input at 1 NC Isolated Input for Low-side IGBT of Phase A Return for Input at 4 NC Isolated Input for High-side IGBT of Phase B Return for Input at 7 NC Isolated Input for Low-side I

Key Features

  • delay time is about 50 usec. Idco ( Pin 26 ), is an absolute value current sense output of DC bus current. The sensor gain is 0.05V/A. The internal impedance of this output is 1KΩ, and internal filter capacitance.

📥 Download Datasheet

Datasheet Details

Part number SPM6M020-060D
Manufacturer Sensitron
File Size 205.74 KB
Description Three-Phase MOSFET BRIDGE
Datasheet download datasheet SPM6M020-060D Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SENSITRON SEMICONDUCTOR TECHNICAL DATA Datasheet 4982, Rev. – SPM6M020-060D Three-Phase MOSFET BRIDGE, With Gate Driver and Optical Isolation, 600 VOLT, 20 AMP ELECTRICAL CHARACTERISTICS PER IGBT DEVICE (Tj=250C UNLESS OTHERWISE SPECIFIED) SYMBOL MIN TYP MAX UNIT PARAMETER MOSFET SPECIFICATIONS Drain to Source Breakdown Voltage IC = 250 µA, VGS = 0V Continuous Drain Current Pulsed Drain Current, 1mS Gate to Source Voltage www.DataSheet4U.