SPM6M060-010D - Three-Phase MOSFET BRIDGE

Sensitron

General Description

A 100 VOLT, 60 AMP, THREE PHASE MOSFET BRIDGE ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE (Tj=250C UNLESS OTHERWISE SPECIFIED) PARAMETER MOSFET SPECIFICATIONS Drain to Source Breakdown Voltage IC = 250 µA, VGS = 0V Continuous Drain Current Pulsed Drain Current, 1mS www.DataSheet4U.com SYMBOL MI

📥 Download Datasheet

SPM6M060-010D three-phase mosfet bridge by Sensitron - Datasheet Preview

Datasheet Details

Part number	SPM6M060-010D
Manufacturer	Sensitron
File Size	88.60 KB
Description	Three-Phase MOSFET BRIDGE
Datasheet	SPM6M060-010D Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
SPM6-1000M	LOW COST MINIATURE DOUBLE BALANCED MIXER	Sirenza Microdevices
SPM6-2200H	LOW COST MINIATURE DOUBLE BALANCED MIXER	Sirenza Microdevices
SPM6-250H	LOW COST MINIATURE DOUBLE BALANCED MIXER	Sirenza Microdevices
SPM6530	INDUCTORS	TDK
SPM-1045	High Linearity Passive FET Mixer	Sirenza Microdevices

Other Datasheets by Sensitron

Part Number	Description
SPM6M020-060D	Three-Phase MOSFET BRIDGE
SPM6M050-010D	Three-Phase MOSFET BRIDGE
SPM6M070-020D	Three-Phase MOSFET BRIDGE
SPM6M080-010D	Three-Phase MOSFET BRIDGE
SPM6G060-120D	Three-Phase IGBT BRIDGE

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4096, Rev A SPM6M060-010D Three-Phase MOSFET Bridge, With Gate Driver and Optical Isolation DESCRIPTION: A 100 VOLT, 60 AMP, THREE PHASE MOSFET BRIDGE ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE (Tj=250C UNLESS OTHERWISE SPECIFIED) PARAMETER MOSFET SPECIFICATIONS Drain to Source Breakdown Voltage IC = 250 µA, VGS = 0V Continuous Drain Current Pulsed Drain Current, 1mS www.DataSheet4U.