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HRLE550P03K - P-Channel MOSFET

Features

  • ‰ Super High Dense Cell Design ‰ Reliable and Rugged ‰ Lower RDS(ON) : 55 Pȍ (Max. ) @VGS=-10V ‰ Lower RDS(ON) : 65 Pȍ (Max. ) @VGS=-4.5V ‰ Lower RDS(ON) : 100 Pȍ (Max. ) @VGS=-2.5V ‰ 100% Avalanche Tested Feb 2015 BVDSS = - 30 V RDS(on)max = 55 Pȍ ID = - 4 A SOT-23 D S G Absolute Maximum Ratings TA=25୅ unless otherwise specified Symbol Parameter Value VDSS VGS ID IDM PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current TA = 25୅ TA = 70୅ Power Dissipati.

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Datasheet Details

Part number HRLE550P03K
Manufacturer SemiHow
File Size 667.52 KB
Description P-Channel MOSFET
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HRLE550P03K HRLE550P03K -30V P-Channel MOSFET FEATURES ‰ Super High Dense Cell Design ‰ Reliable and Rugged ‰ Lower RDS(ON) : 55 Pȍ (Max.) @VGS=-10V ‰ Lower RDS(ON) : 65 Pȍ (Max.) @VGS=-4.5V ‰ Lower RDS(ON) : 100 Pȍ (Max.) @VGS=-2.5V ‰ 100% Avalanche Tested Feb 2015 BVDSS = - 30 V RDS(on)max = 55 Pȍ ID = - 4 A SOT-23 D S G Absolute Maximum Ratings TA=25୅ unless otherwise specified Symbol Parameter Value VDSS VGS ID IDM PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current TA = 25୅ TA = 70୅ Power Dissipation TA = 25୅ TA = 100୅ Operating and Storage Temperature Range -30 ρ12 -4 -3.1 -12 1.4 0.6 -55 to +150 Units V V A A A W W ୅ Thermal Resistance Characteristics Symbol Parameter RșJA Junction-to-Ambient Typ. -- Max.
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