Datasheet4U Logo Datasheet4U.com

HRLD370N10K - N-Channel MOSFET

Features

  •  Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Characteristics  Unrivalled Gate Charge : 53 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 30 mΩ (Typ. ) @VGS=10V  Lower RDS(ON) : 33 mΩ (Typ. ) @VGS=4.5V  100% Avalanche Tested December 2014 BVDSS = 100 V RDS(on) typ = 30 mΩ ID = 25 A D-PAK I-PAK 2 1 1 32 3 HRLD370N10K HRLU370N10K 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDS.

📥 Download Datasheet

Datasheet preview – HRLD370N10K

Datasheet Details

Part number HRLD370N10K
Manufacturer SemiHow
File Size 1.03 MB
Description N-Channel MOSFET
Datasheet download datasheet HRLD370N10K Datasheet
Additional preview pages of the HRLD370N10K datasheet.

📁 Similar Datasheet

  • HRL0103C - Silicon Schottky Barrier Diode (Renesas Technology)
Other Datasheets by SemiHow

Full PDF Text Transcription

Click to expand full text
HRLD370N10K_HRLU370N10K HRLD370N10K / HRLU370N10K 100V N-Channel Trench MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Characteristics  Unrivalled Gate Charge : 53 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 30 mΩ (Typ.) @VGS=10V  Lower RDS(ON) : 33 mΩ (Typ.) @VGS=4.5V  100% Avalanche Tested December 2014 BVDSS = 100 V RDS(on) typ = 30 mΩ ID = 25 A D-PAK I-PAK 2 1 1 32 3 HRLD370N10K HRLU370N10K 1.Gate 2. Drain 3.
Published: |