Datasheet4U Logo Datasheet4U.com

HRLD125N06K - N-Channel MOSFET

Features

  •  Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Characteristics  Unrivalled Gate Charge : 50 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 10 mΩ (Typ. ) @VGS=10V  Lower RDS(ON) : 12 mΩ (Typ. ) @VGS=4.5V  100% Avalanche Tested December 2014 BVDSS = 60 V RDS(on) typ = 10 mΩ ID = 70 A D-PAK I-PAK 2 1 3 HRD125N06K 1 2 3 HRU125N06K 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value.

📥 Download Datasheet

Datasheet preview – HRLD125N06K

Datasheet Details

Part number HRLD125N06K
Manufacturer SemiHow
File Size 861.52 KB
Description N-Channel MOSFET
Datasheet download datasheet HRLD125N06K Datasheet
Additional preview pages of the HRLD125N06K datasheet.

📁 Similar Datasheet

  • HRL0103C - Silicon Schottky Barrier Diode (Renesas Technology)
Other Datasheets by SemiHow

Full PDF Text Transcription

Click to expand full text
HRLD125N06K_HRLU125N06K HRLD125N06K / HRLU125N06K 60V N-Channel Trench MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Characteristics  Unrivalled Gate Charge : 50 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 10 mΩ (Typ.) @VGS=10V  Lower RDS(ON) : 12 mΩ (Typ.) @VGS=4.5V  100% Avalanche Tested December 2014 BVDSS = 60 V RDS(on) typ = 10 mΩ ID = 70 A D-PAK I-PAK 2 1 3 HRD125N06K 1 2 3 HRU125N06K 1.Gate 2. Drain 3.
Published: |