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HRLD1B8N10K - N-Channel MOSFET

Features

  • ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 11.5 nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 140 Pȍ (Typ. ) @VGS=10V ‰ Lower RDS(ON) : 185 Pȍ (Typ. ) @VGS=4.5V ‰ Built-in ESD Diode ‰ 100% Avalanche Tested Jan 2015 BVDSS = 100 V RDS(on) typ = Pȍ ID = 2.7 A D-PAK I-PAK 2 1 1 32 3 HRLD1B8N10K HRLU1B8N10K 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol.

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Datasheet preview – HRLD1B8N10K

Datasheet Details

Part number HRLD1B8N10K
Manufacturer SemiHow
File Size 329.86 KB
Description N-Channel MOSFET
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Full PDF Text Transcription

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HRLD1B8N10K_HRLU1B8N10K HRLD1B8N10K / HRLU1B8N10K 100V N-Channel Trench MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 11.5 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 140 Pȍ (Typ.) @VGS=10V ‰ Lower RDS(ON) : 185 Pȍ (Typ.) @VGS=4.5V ‰ Built-in ESD Diode ‰ 100% Avalanche Tested Jan 2015 BVDSS = 100 V RDS(on) typ = Pȍ ID = 2.7 A D-PAK I-PAK 2 1 1 32 3 HRLD1B8N10K HRLU1B8N10K 1.Gate 2. Drain 3.
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