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HFP12N60U - N-Channel MOSFET

Features

  • ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 42 nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 0.53 ȍ 7S #9GS=10V ‰ 100% Avalanche Tested July 2014 BVDSS = 600 V RDS(on) typ = 0.53 ȍ ID = 12 A TO-220 1 23 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS E.

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Datasheet Details

Part number HFP12N60U
Manufacturer SemiHow
File Size 172.34 KB
Description N-Channel MOSFET
Datasheet download datasheet HFP12N60U Datasheet

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Full PDF Text Transcription

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HFP12N60U HFP12N60U 600V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 42 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 0.53 ȍ 7S #9GS=10V ‰ 100% Avalanche Tested July 2014 BVDSS = 600 V RDS(on) typ = 0.53 ȍ ID = 12 A TO-220 1 23 1.Gate 2. Drain 3.
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