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HFI8N65U - N-Channel MOSFET

Features

  • ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 22.0 nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7S #9GS=10V ‰ 100% Avalanche Tested Jan 2013 BVDSS = 650 V RDS(on) typ ȍ ID = 7.5 A D2-PAK I2-PAK HFW8N65U HFI8N65U 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter V.

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Datasheet Details

Part number HFI8N65U
Manufacturer SemiHow
File Size 297.18 KB
Description N-Channel MOSFET
Datasheet download datasheet HFI8N65U Datasheet

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Full PDF Text Transcription

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HFW8N65U_HFI8N65U HFW8N65U / HFI8N65U 650V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 22.0 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7S #9GS=10V ‰ 100% Avalanche Tested Jan 2013 BVDSS = 650 V RDS(on) typ ȍ ID = 7.5 A D2-PAK I2-PAK HFW8N65U HFI8N65U 1.Gate 2. Drain 3.
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