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HFI50N06 - 60V N-Channel MOSFET

Features

  • ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 40 nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 0.018 Ω (Typ. ) @VGS=10V ‰ 100% Avalanche Tested D2-PAK I2-PAK HFW50N06 HFI50N06 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Vo.

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Datasheet Details

Part number HFI50N06
Manufacturer SemiHow
File Size 238.49 KB
Description 60V N-Channel MOSFET
Datasheet download datasheet HFI50N06 Datasheet

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Full PDF Text Transcription

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HFW50N06_HFI50N06 Nov 2009 HFW50N06 / HFI50N06 60V N-Channel MOSFET BVDSS = 60 V RDS(on) = 18 mΩ ID = 50 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 40 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 0.018 Ω (Typ.) @VGS=10V ‰ 100% Avalanche Tested D2-PAK I2-PAK HFW50N06 HFI50N06 1.Gate 2. Drain 3.
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