Datasheet4U Logo Datasheet4U.com

HFI5N65U - 650V N-Channel MOSFET

Features

  • ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 10.5 nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7S #9GS=10V ‰ 100% Avalanche Tested Jan 2013 BVDSS = 650 V RDS(on) typ ȍ ID = 4.5 A D2-PAK I2-PAK HFW5N65U HFI5N65U 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Val.

📥 Download Datasheet

Datasheet Details

Part number HFI5N65U
Manufacturer SemiHow
File Size 305.58 KB
Description 650V N-Channel MOSFET
Datasheet download datasheet HFI5N65U Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer

Other Datasheets by SemiHow

Part Number Description
HFI5N65S N-Channel MOSFET
HFI5N60S N-Channel MOSFET
HFI5N50S N-Channel MOSFET
HFI50N06 60V N-Channel MOSFET
HFI10N60U N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
HFW5N65U_HFI5N65U HFW5N65U / HFI5N65U 650V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 10.5 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7S #9GS=10V ‰ 100% Avalanche Tested Jan 2013 BVDSS = 650 V RDS(on) typ ȍ ID = 4.5 A D2-PAK I2-PAK HFW5N65U HFI5N65U 1.Gate 2. Drain 3.
Published: |