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HFW10N60U_HFI10N60U
HFW10N60U / HFI10N60U
600V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ 7S #9GS=10V 100% Avalanche Tested
March 2013
BVDSS = 600 V RDS(on) typ ȍ ID = 9.5 A
D2-PAK I2-PAK
HFW10N60U HFI10N60U 1.Gate 2. Drain 3.
HFI10N60U Datasheet
