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HFI5N50S - N-Channel MOSFET

Features

  •  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 15.5 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 1.2 Ω (Typ. ) @VGS=10V  100% Avalanche Tested D2-PAK I2-PAK HFW5N50S HFI5N50S 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Vo.

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Datasheet Details

Part number HFI5N50S
Manufacturer SemiHow
File Size 753.82 KB
Description N-Channel MOSFET
Datasheet download datasheet HFI5N50S Datasheet

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Full PDF Text Transcription

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HFW5N50S_HFI5N50S June 2009 HFW5N50S / HFI5N50S 500V N-Channel MOSFET BVDSS = 500 V RDS(on) typ = 1.2 Ω ID = 5.0 A FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 15.5 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 1.2 Ω (Typ.) @VGS=10V  100% Avalanche Tested D2-PAK I2-PAK HFW5N50S HFI5N50S 1.Gate 2. Drain 3.
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