HCS65R360S Datasheet PDF (N-Channel Super Junction MOSFET)

HCS65R360S - N-Channel Super Junction MOSFET

Features

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 23 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested November 2014 BVDSS = 650 V RDS(on) typ = 0.32 ȍ ID = 11 A TO-220F 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM.

Datasheet Details

Part number	HCS65R360S
Manufacturer	SemiHow
File Size	164.59 KB
Description	N-Channel Super Junction MOSFET
Datasheet	HCS65R360S Datasheet
Additional preview pages of the HCS65R360S datasheet.

📁 Similar Datasheet

HCS00MS - Radiation Hardened Quad 2-Input NAND Gate (Intersil Corporation)

HCS02MS - Radiation Hardened Quad 2-Input NOR Gate (Intersil Corporation)

HCS04MS - Radiation Hardened Hex Inverter (Intersil Corporation)

HCS05MS - Radiation Hardened Hex Inverter with Open Drain (Intersil Corporation)

HCS08 - Microcontrollers (Freescale Semiconductor)

HCS0805 - METAL STRIP CURRENT SENSING RESISTORS (HITANO)

HCS08MS - Radiation Hardened Quad 2-Input AND Gate (Intersil Corporation)

HCS101 - Fixed Code Encoder (Microchip)

HCS109MS - Radiation Hardened Dual JK Flip Flop (Intersil)

HCS10MS - Radiation Hardened Triple 3-Input NAND Gate (Intersil)

Full PDF Text Transcription

Click to expand full text

HCS65R360S HCS65R360S 650V N-Channel Super Junction MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 23 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested November 2014 BVDSS = 650 V RDS(on) typ = 0.32 ȍ ID = 11 A TO-220F 12 3 1.Gate 2. Drain 3.

Published: Apr 8, 2016 |