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Ordering number : EN9054
RD2006RH-SB
SANYO Semiconductors
DATA SHEET
RD2006RH-SB
Features
• • •
Diffused Junction Silicon Diode
Ultrahigh-Speed Switching Diode
VRRM=600V VF=1.75V max. (IF=20A) trr=21ns (typ.)
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Repetitive Peak Reverse Voltage Average Output Current R.M.S Forward Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM DC bias 50Hz resistive load, Sine wave Tc=63°C Tc=25°C (SANYO’s ideal heat dissipation condition) *, Package limited, DC 50Hz Sine wave, 1 pulse Conditions Ratings 600 20 30 220 150 --55 to +150 Unit V A A A °C °C
IO IF(RMS) IFSM
Tj Tstg
*.