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RD2003JS-SB - Ultrahigh-Speed Switching Diode

Datasheet Summary

Features

  • Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode VF=1.3V max. (IF=20A) VRRM=300V trr=20ns (typ. ) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Non-repeated Peak Reverse Surge Voltage Average Output Current R. M. S Forward Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM DC bias PW≤100μs, duty ≤ 0.1 50Hz resistive load, Sine wave Tc=38°C Tc=25°C (SANYO’s ideal heat d.

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Datasheet Details

Part number RD2003JS-SB
Manufacturer Sanyo
File Size 210.77 KB
Description Ultrahigh-Speed Switching Diode
Datasheet download datasheet RD2003JS-SB Datasheet
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Ordering number : ENA1904 RD2003JS-SB SANYO Semiconductors DATA SHEET RD2003JS-SB Features • • • Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode VF=1.3V max. (IF=20A) VRRM=300V trr=20ns (typ.) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Non-repeated Peak Reverse Surge Voltage Average Output Current R.M.S Forward Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM DC bias PW≤100μs, duty ≤ 0.1 50Hz resistive load, Sine wave Tc=38°C Tc=25°C (SANYO’s ideal heat dissipation condition) Package limited, DC 50Hz sine wave 1pulse Conditions Ratings 300 350 20 25 180 150 --55 to +150 Unit V V A A A °C °C IO IF(RMS) IFSM Tj Tstg Package Dimensions unit : mm (typ) 7533-001 10.0 3.2 3.5 4.5 2.
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