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RD2004JN - High-Speed Switching Diode

Datasheet Summary

Features

  • Diffused Junction Silicon Diode Low VF.
  • High-Speed Switching Diode High breakdown voltage (VRRM=400V). High reliability. Fast forward / reverse recovery time. Low noise at the time of reverse recovery. Attachment workability is good by Mica-less package. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symb.

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Datasheet Details

Part number RD2004JN
Manufacturer Sanyo
File Size 205.52 KB
Description High-Speed Switching Diode
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Ordering number : ENA1486 RD2004JN SANYO Semiconductors DATA SHEET RD2004JN Features • • • • • Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode High breakdown voltage (VRRM=400V). High reliability. Fast forward / reverse recovery time. Low noise at the time of reverse recovery. Attachment workability is good by Mica-less package.
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