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RD2006LS-SB5 - Ultrahigh-Speed Switching Diode

Features

  • Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode High breakdown voltage (VRRM=600V). High reliability. Easy to be mounted, good heat dissipation. Fast reverse recovery time. Low noise at the time of reverse recovery. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM Conditions Ratings 600 2.

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Datasheet Details

Part number RD2006LS-SB5
Manufacturer Sanyo
File Size 250.60 KB
Description Ultrahigh-Speed Switching Diode
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Ordering number : ENA1613 RD2006LS-SB5 SANYO Semiconductors DATA SHEET RD2006LS-SB5 Features • • • • • Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode High breakdown voltage (VRRM=600V). High reliability. Easy to be mounted, good heat dissipation. Fast reverse recovery time. Low noise at the time of reverse recovery.
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