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SW13N65D - N-channel MOSFET

Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Features

  • N-channel Enhanced mode TO-220F MOSFET.
  • High ruggedness.
  • Low RDS(ON) (Typ 0.6Ω)@VGS=10V.
  • Low Gate Charge (Typ 54nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested.

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Datasheet Details

Part number SW13N65D
Manufacturer Samwin
File Size 818.71 KB
Description N-channel MOSFET
Datasheet download datasheet SW13N65D Datasheet

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Full PDF Text Transcription

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SW13N65D Features N-channel Enhanced mode TO-220F MOSFET  High ruggedness  Low RDS(ON) (Typ 0.6Ω)@VGS=10V  Low Gate Charge (Typ 54nC)  Improved dv/dt Capability  100% Avalanche Tested  Application: LED, Charger, PC Power TO-220F 1 23 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. BVDSS : 650V ID : 13A RDS(ON) : 0.
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