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K9G8G08U0B - FLASH MEMORY

Download the K9G8G08U0B datasheet PDF. This datasheet also covers the K9G8G08B0B variant, as both devices belong to the same flash memory family and are provided as variant models within a single manufacturer datasheet.

General Description

Offered in 1Gx8bit, the K9G8G08X0B is a 8G-bit NAND Flash Memory with spare 256M-bit.

The device is offered in 2.7V and 3.3V Vcc.

Its NAND cell provides the most cost-effective solution for the solid state mass storage market.

Key Features

  • Voltage Supply - 2.7V Device(K9G8G08B0B) : 2.5V ~ 2.9V - 3.3V Device(K9G8G08U0B) : 2.7V ~ 3.6V.
  • Organization - Memory Cell Array : (1G + 32M) x 8bit - Data Register : (2K + 64) x8bit.
  • Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (256K + 8K)Byte.
  • Page Read Operation - Page Size : (2K + 64)Byte - Random Read : 60µs(Max. ) - Serial Access : 25ns(Min. ).
  • Memory Cell : 2bit / Memory Cell.
  • Fast Write Cycle Time - Progr.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (K9G8G08B0B-Samsung.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for K9G8G08U0B (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K9G8G08U0B. For precise diagrams, and layout, please refer to the original PDF.

K9G8G08B0B K9G8G08U0B Final FLASH MEMORY K9G8G08X0B INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOT...

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TION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2.

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