Datasheet Details
| Part number | K9GAG08B0D |
|---|---|
| Manufacturer | Samsung Semiconductor |
| File Size | 1.06 MB |
| Description | FLASH MEMORY |
| Datasheet |
 K9GAG08B0D Datasheet
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General Description
Offered in 2Gx8bit, the K9GAG08X0D is a 16G-bit NAND Flash Memory with spare 872M-bit.
The device is offered in 2.7V and 3.3V Vcc.
Its NAND cell provides the most cost-effective solution for the solid state mass storage market.
Key Features
- Voltage Supply - 2.7V Device(K9G8G08B0D) : 2.5V ~ 2.9V - 3.3V Device(K9GAG08U0D) : 2.7V ~ 3.6V.
- Organization - Memory Cell Array : (2G + 109M) x 8bit - Data Register : (4K + 218) x 8bit.
- Automatic Program and Erase - Page Program : (4K + 218)Byte - Block Erase : (512K + 27.25K)Byte.
- Page Read Operation - Page Size : (4K + 218)Byte - Random Read : 60µs(Max. ) - Serial Access : 30ns(Min. ).
- Memory Cell : 2bit / Memory Cell.
- Fast Write Cycle Time.