Datasheet Details
| Part number | K9GAG08U0M |
|---|---|
| Manufacturer | Samsung Semiconductor |
| File Size | 1.04 MB |
| Description | Flash Memory |
| Datasheet |
 K9GAG08U0M Datasheet
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General Description
Offered in 1Gx8bit, the K9G8G08U0M is a 8G-bit NAND Flash Memory with spare 256M-bit.
Its NAND cell provides the most costeffective solution for the solid state mass storage market.
Key Features
- Fast Write Cycle Time - Program time : 800µs(Typ. ) - Block Erase Time : 1.5ms(Typ. ).
- Command/Address/Data Multiplexed I/O Port.
- Hardware Data Protection - Program/Erase Lockout During Power Transitions.
- Reliable CMOS Floating-Gate Technology - Endurance : 5K Program/Erase Cycles(with 4bit/512byte ECC) - Data Retention : 10 Years.
- Command Register Operation.
- Unique ID for Copyright Protection.
- Package : - K9G8G08U0M-PCB0/PIB0 : Pb-F.