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K9G4G08U0A - (K9G4G08U0A / K9G4G08B0A) Flash Memory

General Description

Offered in 512Mx8bit, the K9G4G08X0A is a 4G-bit NAND Flash Memory with spare 128M-bit.

The device is offered in 2.7V and 3.3V Vcc.

Its NAND cell provides the most cost-effective solution for the solid state mass storage market.

Key Features

  • Voltage Supply - 2.7V Device(K9G4G08B0A) : 2.5V ~ 2.9V - 3.3V Device(K9G4G08U0A) : 2.7V ~ 3.6V.
  • Organization - Memory Cell Array : (512M + 16M) x 8bit - Data Register : (2K + 64) x 8bit.
  • Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (256K + 8K)Byte.
  • Page Read Operation - Page Size : (2K + 64)Byte - Random Read : 60µs(Max. ) - Serial Access : 30ns(Min. ).
  • Memory Cell : 2bit / Memory Cell.
  • Fast Write Cycle Time - Pro.

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Full PDF Text Transcription for K9G4G08U0A (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K9G4G08U0A. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com K9L8G08U1A K9G4G08U0A K9G4G08B0A Preliminary FLASH MEMORY K9XXG08XXA INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS ...

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IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2.

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