Datasheet Details
| Part number | K9G8G08B0B |
|---|---|
| Manufacturer | Samsung Semiconductor |
| File Size | 839.83 KB |
| Description | FLASH MEMORY |
| Datasheet |
 K9G8G08B0B Datasheet
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General Description
Offered in 1Gx8bit, the K9G8G08X0B is a 8G-bit NAND Flash Memory with spare 256M-bit.
The device is offered in 2.7V and 3.3V Vcc.
Its NAND cell provides the most cost-effective solution for the solid state mass storage market.
Key Features
- Voltage Supply - 2.7V Device(K9G8G08B0B) : 2.5V ~ 2.9V - 3.3V Device(K9G8G08U0B) : 2.7V ~ 3.6V.
- Organization - Memory Cell Array : (1G + 32M) x 8bit - Data Register : (2K + 64) x8bit.
- Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (256K + 8K)Byte.
- Page Read Operation - Page Size : (2K + 64)Byte - Random Read : 60µs(Max. ) - Serial Access : 25ns(Min. ).
- Memory Cell : 2bit / Memory Cell.
- Fast Write Cycle Time - Progr.