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K4T51083QG - 512Mb G-die DDR2 SDRAM

Download the K4T51083QG datasheet PDF. This datasheet also covers the K4T51043QG variant, as both devices belong to the same 512mb g-die ddr2 sdram family and are provided as variant models within a single manufacturer datasheet.

General Description

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.

Figure 1.

Key Features

  • Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS Compliant Halogen Free TO-220 Plastic Package.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (K4T51043QG-Samsung.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for K4T51083QG (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K4T51083QG. For precise diagrams, and layout, please refer to the original PDF.

CSD18502KCS www.ti.com SLPS367A – AUGUST 2012 – REVISED OCTOBER 2012 40-V, N-Channel NexFET™ Power MOSFETs Check for Samples: CSD18502KCS 1 FEATURES Ultra Low Qg and Qgd ...

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OSFETs Check for Samples: CSD18502KCS 1 FEATURES Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS Compliant Halogen Free TO-220 Plastic Package PRODUCT SUMMARY TA = 25°C VDS Qg Qgd RDS(on) VGS(th) Drain to Source Voltage Gate Charge Total (10V) Gate Charge Gate to Drain Drain to Source On Resistance Threshold Voltage TYPICAL VALUE 40 52 8.4 VGS = 4.5V VGS = 10V 1.8 3.3 2.