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K4T51163QB - 512Mb B-die DDR2 SDRAM

General Description

3.

4.

Rev.

Key Features

  • Speed CAS Latency tRCD(min) tRP(min) tRC(min) DDR2-533 4-4-4 4 15 15 55 DDR2-400 3-3-3 3 15 15 55 Units tCK ns ns ns.
  • JEDEC standard 1.8V ± 0.1V Power Supply.
  • VDDQ = 1.8V ± 0.1V.
  • 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin.
  • 4 Banks.
  • Posted CAS.
  • Programmable CAS Latency: 3, 4, 5.
  • Programmable Additive Latency: 0, 1 , 2 , 3 and 4.
  • Write Latency(WL) = Read Latency(RL) -1.
  • Burst Length: 4 , 8(Interleave.

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Full PDF Text Transcription for K4T51163QB (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K4T51163QB. For precise diagrams, and layout, please refer to the original PDF.

512Mb B-die DDR2 SDRAM DDR2 SDRAM 512Mb B-die DDR2 SDRAM Specification Version 1.4 February 2005 Page 1 of 29 Rev. 1.4 Feb. 2005 512Mb B-die DDR2 SDRAM Contents DDR2 SDRA...

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e 1 of 29 Rev. 1.4 Feb. 2005 512Mb B-die DDR2 SDRAM Contents DDR2 SDRAM 0. Ordering Information 1. Key Feature 2. Package Pinout/Mechnical Dimension & Addressing 2.1 Package Pintout & Mechnical Dimension 2.2 Input/Output Function Description 2.3 Addressing 3. Absolute Maximum Rating 4. AC & DC Operating Conditions & Specifications Page 2 of 29 Rev. 1.4 Feb. 2005 512Mb B-die DDR2 SDRAM 0.

📁 Similar Datasheet

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Samsung semiconductor Logo K4T51163QE 512Mb E-die DDR2 SDRAM Specification Samsung semiconductor

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