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K6X4016T3F - 256Kx16 bit Low Power and Low Voltage CMOS Static RAM

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Samsung semiconductor

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K6X4016T3F 256Kx16 bit Low Power and Low Voltage CMOS Static RAM by Samsung semiconductor - Datasheet Preview — Datasheet preview – K6X4016T3F

Datasheet Details

Part number	K6X4016T3F
Manufacturer	Samsung semiconductor
File Size	138.28 KB
Description	256Kx16 bit Low Power and Low Voltage CMOS Static RAM
Datasheet	K6X4016T3F Datasheet
Additional preview pages of the K6X4016T3F datasheet.

Product details

Description

The K6X4016T3F families are fabricated by SAMSUNG′s advanced CMOS process technology.

Features

Process Technology: Full CMOS.
Organization: 256K x16.
Power Supply Voltage: 2.7~3.6V.
Low Data Retention Voltage: 2V(Min).
Three State Outputs.
Package Type: 44-TSOP2-400F CMOS SRAM.

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Published: Apr 7, 2005 |