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K6X4016C3F - 256Kx16 bit Low Power full CMOS Static RAM

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Samsung semiconductor

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K6X4016C3F 256Kx16 bit Low Power full CMOS Static RAM by Samsung semiconductor - Datasheet Preview — Datasheet preview – K6X4016C3F

Datasheet Details

Part number	K6X4016C3F
Manufacturer	Samsung semiconductor
File Size	131.06 KB
Description	256Kx16 bit Low Power full CMOS Static RAM
Datasheet	K6X4016C3F Datasheet
Additional preview pages of the K6X4016C3F datasheet.

Product details

Description

The K6X4016C3F families are fabricated by SAMSUNG′s advanced full CMOS process technology.

Features

Process Technology: Full CMOS.
Organization: 256Kx16.
Power Supply Voltage: 4.5~5.5V.
Low Data Retention Voltage: 2V(Min).
Three state output and TTL compatible.
Package Type: 44-TSOP2-400F CMOS SRAM.

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Published: Apr 7, 2005 |