Full PDF Text Transcription for K6X4008C1F (Reference)
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K6X4008C1F Family Document Title 512Kx8 bit Low Power full CMOS Static RAM Revision History Revision No. History 0.0 Initial draft 0.1 Revised - Added Commercial Product....
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No. History 0.0 Initial draft 0.1 Revised - Added Commercial Product. 1.0 Finalized - Added Lead Free 32-SOP-525 Product - Changed ICC from 10mA to 5mA - Changed ICC1 from 8mA to 7mA - Changed ICC2 from 40mA to 30mA - Changed ISB from 3mA to 0.4mA - Changed IDR(Commercial) from 15µA to 12µA - Changed IDR(industrial) from 20µA to 12µA - Changed IDR(Automotive) from 30µA to 25µA CMOS SRAM Draft Date July 30, 2002 Remark Preliminary November 30, 2002 Preliminary September 16, 2003 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications an