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K6X0808T1D - 32Kx8 bit Low Power CMOS Static RAM

Download the K6X0808T1D datasheet PDF. This datasheet also covers the K6X variant, as both devices belong to the same 32kx8 bit low power cmos static ram family and are provided as variant models within a single manufacturer datasheet.

General Description

The K6X0808T1D families are fabricated by SAMSUNG′s advanced CMOS process technology.

The families support verious operating temperature ranges and have various package types for user flexibility of system design.

Key Features

  • Process Technology: Full CMOS28.
  • Organization: 32K x 8.
  • Power Supply Voltage: 2.7~3.6V.
  • Low Data Retention Voltage: 1.5V(Min).
  • Three state outputs.
  • Package Type: 28-SOP-450, 28-TSOP1-0813.4F/R CMOS SRAM.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (K6X-0808T.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for K6X0808T1D (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K6X0808T1D. For precise diagrams, and layout, please refer to the original PDF.

K6X0808T1D Family Document Title 32Kx8 bit Low Power CMOS Static RAM CMOS SRAM Revision History Revision No. 0.0 0.1 History Initial draft revised - errata : corrected 28...

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sion No. 0.0 0.1 History Initial draft revised - errata : corrected 28-SOP-525 to 28-SOP-450 in pakage type revised - Added commercial product. Finalized - Changed ICC from 3mA to 2mA - Changed ICC2 from 25mA to 20mA - Changed ISB from 3mA to 0.4mA - Changed ISB1 for K6X0808T1D-F from 10µA to 6µA - Changed ISB1 for K6X0808T1D-F from 20µA to 10µA - Changed IDR for K6X0808T1D-F 10µA to 6µA - Changed IDR for K6X0808T1D-Q 20µA to 10µA - Errata correction Draft Data October 09, 2002 November 08, 2002 Remark Preliminary Preliminary 0.2 March 27, 2003 Preliminary 1.0 December 16, 2003 Final The attached datasheets are provided by

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