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K6F3216T6M - 2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

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Samsung semiconductor

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K6F3216T6M 2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM by Samsung semiconductor - Datasheet Preview — Datasheet preview – K6F3216T6M

Datasheet Details

Part number	K6F3216T6M
Manufacturer	Samsung semiconductor
File Size	167.24 KB
Description	2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Datasheet	K6F3216T6M Datasheet
Additional preview pages of the K6F3216T6M datasheet.

Product details

Description

The K6F3216T6M families are fabricated by SAMSUNG′s advanced full CMOS process technology.

Features

Process Technology: Full CMOS.
Organization: 2M x16.
Power Supply Voltage: 2.7~3.6V.
Low Data Retention Voltage: 1.5V(Min).
Three State Outputs.
Package Type: 55-TBGA-7.50x12.00 CMOS SRAM.

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Published: Apr 7, 2005 |