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K4S1G0732B-TC75 - SDRAM stacked 1Gb B-die

Download the K4S1G0732B-TC75 datasheet PDF. This datasheet also covers the K4S1G0732B variant, as both devices belong to the same sdram stacked 1gb b-die family and are provided as variant models within a single manufacturer datasheet.

General Description

The K4S1G0732B is 1,073,741,824bits synchronous high data rate Dynamic RAM organized as 4 x 33,554,432 words by 8 bits, fabricated with SAMSUNG's high performance CMOS technology.

Key Features

  • JEDEC standard 3.3V power supply.
  • LVTTL compatible with multiplexed address.
  • Four banks operation.
  • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8) -. Burst type (Sequential & Interleave).
  • All inputs are sampled at the positive going edge of the system clock.
  • Burst read single-bit write operation.
  • DQM for masking.
  • Auto & self refresh.
  • 64ms refresh period (8K Cycle) CMOS SDRA.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (K4S1G0732B_Samsungsemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for K4S1G0732B-TC75 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K4S1G0732B-TC75. For precise diagrams, and layout, please refer to the original PDF.

SDRAM stacked 1Gb B-die (x8) CMOS SDRAM stacked 1Gb B-die SDRAM Specification Revision 1.1 February 2004 * Samsung Electronics reserves the right to change products or sp...

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2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.1 February 2004 SDRAM stacked 1Gb B-die (x8) Revision History Revision 1.0 (August, 2003) - First release. Revision 1.1 (February, 2004) -Corrected typo. CMOS SDRAM Rev. 1.1 February 2004 SDRAM stacked 1Gb B-die (x8) 32M x 8Bit x 4 Banks Synchronous DRAM FEATURES • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8) -. Burst type (Sequential & Interleave) • All inputs are sampled at t

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