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K4S280432A - 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL

Download the K4S280432A datasheet PDF. This datasheet also covers the K4S-280432 variant, as both devices belong to the same 128mbit sdram 8m x 4bit x 4 banks synchronous dram lvttl family and are provided as variant models within a single manufacturer datasheet.

General Description

The K4S280432A is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits, fabricated with SAMSUNG′s high performance CMOS technology.

Key Features

  • JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 Page ) -. Burst type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock. Burst read single-bit write operation DQM for masking Auto & self refresh 64ms refresh period (4K Cycle) CMOS SDRAM.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (K4S-280432-A.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for K4S280432A (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K4S280432A. For precise diagrams, and layout, please refer to the original PDF.

K4S280432A CMOS SDRAM 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 * Samsung Electronics reserves the right to change products or speci...

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9 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Aug. 1999 K4S280432A 8M x 4Bit x 4 Banks Synchronous DRAM FEATURES • • • • JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 Page ) -. Burst type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock.