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K4S161622E - 1M x 16 SDRAM

Download the K4S161622E datasheet PDF. This datasheet also covers the K4S variant, as both devices belong to the same 1m x 16 sdram family and are provided as variant models within a single manufacturer datasheet.

General Description

The K4S161622E is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology.

Key Features

  • 3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs -. CAS Latency ( 2 & 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock Burst Read Single-bit Write operation DQM for masking Auto & self refresh 15.6us refresh duty cycle (2K/32ms) CMOS SDRAM.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (K4S-1616.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for K4S161622E (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K4S161622E. For precise diagrams, and layout, please refer to the original PDF.

K4S161622E CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Revision 1.1 Jan 2003 Samsung Electronics reserves the right to change products or speci...

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003 Samsung Electronics reserves the right to change products or specification without notice. Rev 1.1 Jan '03 K4S161622E 512K x 16Bit x 2 Banks Synchronous DRAM FEATURES • • • • 3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs -. CAS Latency ( 2 & 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock Burst Read Single-bit Write operation DQM for masking Auto & self refresh 15.

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