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K4R761869A - 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM

General Description

Signal I/O Type CMOSa # Pins center 2 Description Serial input/output.

Pins for reading from and writing to the control registers using a serial access protocol.

Also used for power management.

Key Features

  • for mobile, graphics and large memory systems include power management, byte masking, and x18 organization. The two data bits in the x18 organization are general and can be used for additional storage and bandwidth or for error correction. Direct RDRAM™.

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Full PDF Text Transcription for K4R761869A (Reference)

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K4R761869A Direct RDRAM™ 576Mbit RDRAM(A-die) 1M x 18bit x 32s banks Direct RDRAMTM www.DataSheet4U.com Version 1.41 January 2004 Page -1 Version 1.41 Jan. 2004 K4R76186...

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.com Version 1.41 January 2004 Page -1 Version 1.41 Jan. 2004 K4R761869A Change History Direct RDRAM™ Version 1.4( Sept. 2003) - First Copy ( Version 1.4 is named to unify the version of component and device operation datasheets) - Based on the 256/288Mb D-die Version 1.4 Version 1.41(Jan. 2004) - Add the part numbers for lead free package - Correct the Package total thickness www.DataSheet4U.com Page 0 Version 1.41 Jan.

More Datasheets from Samsung Semiconductor

Part Number Description
K4R271669A 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
K4R271669B 256K x 16/18 bit x 32s banks Direct RDRAMTM
K4R271669E 128Mbit RDRAM(E-die)
K4R271669F 128Mbit RDRAM(F-die)
K4R441869A 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
K4R441869B 256K x 16/18 bit x 32s banks Direct RDRAMTM
K4R571669D 256/288Mbit RDRAM(D-die)
K4R881869 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM
K4R881869D 256/288Mbit RDRAM(D-die)
K4R881869M 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM