K4R271669B - 256K x 16/18 bit x 32s banks Direct RDRAMTM
Samsung Semiconductor
General Description
Serial input/output.
Pins for reading from and writing to the control registers using a serial access protocol.
Also used for power management.
Key Features
for mobile, graphics and large memory systems include power management, byte masking, and x18 organization. The two data bits in the x18 organization are general and can be used for additional storage and bandwidth or for error correction. Direct RDRAM™.
Full PDF Text Transcription for K4R271669B (Reference)
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K4R271669B/K4R441869B Direct RDRAM™ 128/144Mbit RDRAM(B-die) 256K x 16/18 bit x 32s banks Direct RDRAMTM Version 1.11 October 2000 Page -1 Version 1.11 Oct. 2000 K4R27166...
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AMTM Version 1.11 October 2000 Page -1 Version 1.11 Oct. 2000 K4R271669B/K4R441869B Change History Version 1.11 ( October 2000) - Preliminary * Based on the Rambus 1.11ver. 128/144Mbit(32s banks) RDRAM Datasheet. Direct RDRAM™ Page 0 Version 1.11 Oct. 2000 K4R271669B/K4R441869B Overview The Rambus Direct RDRAM™ is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and low latency are required. The 128/144-Mbit Direct Rambus DRAMs (RDRAM®) are extremely high-speed CMOS DRAMs organized as
K4R271669B Datasheet
