Datasheet Details
| Part number | K4R271669F |
|---|---|
| Manufacturer | Samsung Semiconductor |
| File Size | 292.12 KB |
| Description | 128Mbit RDRAM(F-die) |
| Datasheet |
 K4R271669F Datasheet
|
|
|
General Description
Signal I/O Type CMOSa # Pins center 2 Description Serial input/output.
Pins for reading from and writing to the control registers using a serial access protocol.
Also used for power management.
Key Features
- for mobile, graphics and communications include power management and byte masking. Direct RDRAM™ SEC 240 xCS8 K4R271669F Figure 1: Direct RDRAM CSP Package The 128Mbit RDRAM devices are offered in a horizontal center-bond fanout CSP package. Key Timing Parameters/Part Numbers Speed Organization tRAC I/O (Row Bin Freq. Access MHz Time) ns -CS8 -CS8 800 800 45 45 Features.
- Highest sustained bandwidth per DRAM device - 1.6 GB/s sustained data transfer rate - Separate control and data.