K4R881869M - 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM
Samsung Semiconductor
Download the K4R881869M datasheet PDF.
This datasheet also covers the K4R variant, as both devices belong to the same 288mbit rdram 512k x 18 bit x 2*16 dependent banks direct rdramtm family and are provided as variant models within a single manufacturer datasheet.
General Description
Signal SIO1,SIO0 I/O I/O Type CMOSa # Pins 2 Description Serial input/output.
Pins for reading from and writing to the control registers using a serial access protocol.
Also used for power management.
Key Features
for mobile, graphics and large memory systems include power management, byte masking, and x18 organization. The two data bits in the x18 organization are general and can be used for additional storage/bandwidth or for error correction. Preliminary Direct RDRAM™.
Full PDF Text Transcription for K4R881869M (Reference)
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K4R881869M. For precise diagrams, and layout, please refer to the original PDF.
K4R881869M Preliminary Direct RDRAM™ 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM Revision 0.9 January 2000 Page -1 Rev. 0.9 Jan. 2000 K4R881869M Rev...
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TM Revision 0.9 January 2000 Page -1 Rev. 0.9 Jan. 2000 K4R881869M Revision History Version 0.9 (January 2000) - Preliminary - First Copy - Based on the Rambus Datasheet 0.9ver. Preliminary Direct RDRAM™ Page 0 Rev. 0.9 Jan. 2000 K4R881869M Overview The Rambus Direct RDRAM™ is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and low latency are required. The 288Mbit Direct Rambus DRAMs (RDRAM®) are extremely high-speed CMOS DRAMs organized as 16M words by 18 bits.
K4R881869M Datasheet
