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K3N7V4000C - 64M-Bit (4M X 16) CMOS Mask ROM

Download the K3N7V4000C datasheet PDF. This datasheet also covers the K3N7U4000C variant, as both devices belong to the same 64m-bit (4m x 16) cmos mask rom family and are provided as variant models within a single manufacturer datasheet.

General Description

The K3N7V(U)4000C-DC is a fully static mask programmable ROM organized 4,194,304x16 bit.

It is fabricated using silicongate CMOS process technology.

This device operates with a low power supply, and all inputs and outputs are TTL compatible.

Key Features

  • Switchable organization 4,194,304 x 16(word mode).
  • Fast access time 3.3V Operation : 100ns(Max. )@CL=50pF, 120ns(Max. )@C L=100pF 3.0V Operation : 120ns(Max. )@CL=100pF.
  • Supply voltage : single +3.3V/ single +3.0V.
  • Current consumption Operating : 40mA(Max. ).
  • Fully static operation.
  • All inputs and outputs TTL compatible.
  • Three state outputs.
  • Package -. K3N7V(U)4000C-DC: 42-DIP-600 CMOS MASK ROM www. DataSheet4U. com.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (K3N7U4000C_SamsungSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for K3N7V4000C (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K3N7V4000C. For precise diagrams, and layout, please refer to the original PDF.

K3N7V(U)4000C-DC 64M-Bit (4Mx16) CMOS MASK ROM FEATURES • Switchable organization 4,194,304 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.)@CL=50pF, 120ns...

View more extracted text
d mode) • Fast access time 3.3V Operation : 100ns(Max.)@CL=50pF, 120ns(Max.)@C L=100pF 3.0V Operation : 120ns(Max.)@CL=100pF • Supply voltage : single +3.3V/ single +3.0V • Current consumption Operating : 40mA(Max.) • Fully static operation • All inputs and outputs TTL compatible • Three state outputs • Package -. K3N7V(U)4000C-DC: 42-DIP-600 CMOS MASK ROM www.DataSheet4U.com GENERAL DESCRIPTION The K3N7V(U)4000C-DC is a fully static mask programmable ROM organized 4,194,304x16 bit. It is fabricated using silicongate CMOS process technology. This device operates with a low power supply, and all inputs and outputs are TTL c

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