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K3N5V1000D-TC - 16M-Bit (2M X 8 / 1M X 16) CMOS Mask ROM

General Description

The K3N5V(U)1000D-TC is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 2,097,152x8 bit(byte mode) or as 1,048,576x16 bit(word mode) depending on BHE voltage level.(See mode selection table) This device operates with 3.0V or 3.3V

Key Features

  • Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode).
  • Fast access time : 100ns(Max. ).
  • Supply voltage : single +3.0V/ single +3.3V.
  • Current consumption Operating : 40mA(Max. ) Standby : 30µA(Max. ).
  • Fully static operation.
  • All inputs and outputs TTL compatible.
  • Three state outputs www. DataSheet4U. com.
  • Package -. K3N5V(U)1000D-TC : 44-TSOP2-400 CMOS MASK ROM.

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Full PDF Text Transcription for K3N5V1000D-TC (Reference)

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K3N5V(U)1000D-TC 16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM FEATURES • Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode) • Fast access time : 100ns(Max....

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8(byte mode) 1,048,576 x 16(word mode) • Fast access time : 100ns(Max.) • Supply voltage : single +3.0V/ single +3.3V • Current consumption Operating : 40mA(Max.) Standby : 30µA(Max.) • Fully static operation • All inputs and outputs TTL compatible • Three state outputs www.DataSheet4U.com • Package -. K3N5V(U)1000D-TC : 44-TSOP2-400 CMOS MASK ROM GENERAL DESCRIPTION The K3N5V(U)1000D-TC is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 2,097,152x8 bit(byte mode) or as 1,048,576x16 bit(word mode) depending on BHE voltage level.(See mode selection table

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