Datasheet4U Logo Datasheet4U.com

K3N5VU1000F-DGC - 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM

Download the K3N5VU1000F-DGC datasheet PDF. This datasheet also covers the K3N5V1000F-DC variant, as both devices belong to the same 16m-bit (2mx8 / 1mx16) cmos mask rom family and are provided as variant models within a single manufacturer datasheet.

General Description

The K3N5V(U)1000F-D(G)C is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 2,097,152 x 8 bit(byte mode) or as 1,048,576x16 bit(word mode) depending on BHE voltage level.(See mode selection table) This device operates with 3.0V or

Key Features

  • Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode).
  • Fast access time 3.3V Operation : 100ns(Max. )@CL=50pF, 120ns(Max. )@CL=100pF 3.0V Operation : 120ns(Max. )@CL=100pF.
  • Supply voltage : single +3.0V/single +3.3V www. DataSheet4U. com.
  • Current consumption Operating : 40mA(Max. ) Standby : 30µA(Max. ).
  • Fully static operation.
  • All inputs and outputs TTL compatible.
  • Three state outputs.
  • Package -. K3N5V(U)1000.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (K3N5V1000F-DC_SamsungSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for K3N5VU1000F-DGC (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K3N5VU1000F-DGC. For precise diagrams, and layout, please refer to the original PDF.

K3N5V(U)1000F-D(G)C 16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM FEATURES • Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode) • Fast access time 3.3V Oper...

View more extracted text
x 8(byte mode) 1,048,576 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.)@CL=50pF, 120ns(Max.)@CL=100pF 3.0V Operation : 120ns(Max.)@CL=100pF • Supply voltage : single +3.0V/single +3.3V www.DataSheet4U.com • Current consumption Operating : 40mA(Max.) Standby : 30µA(Max.) • Fully static operation • All inputs and outputs TTL compatible • Three state outputs • Package -. K3N5V(U)1000F-DC : 42-DIP-600 -.

More Datasheets from Samsung Semiconductor

Part Number Description
K3N5VU1000F-DC 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM
K3N5VU1000D-TC 16M-Bit (2M X 8 / 1M X 16) CMOS Mask ROM
K3N5V1000D-TC 16M-Bit (2M X 8 / 1M X 16) CMOS Mask ROM
K3N5V1000F-DC 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM
K3N5V1000F-DGC 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM
K3N7U4000B 64M-Bit (4M X 16) CMOS Mask ROM
K3N7U4000C 64M-Bit (4M X 16) CMOS Mask ROM
K3N7V4000B 64M-Bit (4M X 16) CMOS Mask ROM
K3N7V4000C 64M-Bit (4M X 16) CMOS Mask ROM