Datasheet4U Logo Datasheet4U.com

SPP2329 - P-Channel MOSFET

Description

The SPP2329 is the P-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology.

Features

  • -150V/-1.0A, RDS(ON)=900mΩ@VGS=-10V.
  • -150V/-1.0A, RDS(ON)=1000mΩ@VGS=-4.5V.
  • High density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • SOT-23-6L package design PIN.

📥 Download Datasheet

Datasheet Details

Part number SPP2329
Manufacturer SYNC POWER
File Size 152.50 KB
Description P-Channel MOSFET
Datasheet download datasheet SPP2329 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SPP20N60C2 Cool MOS Power Transistor Infineon Technologies
SPP20N60C3 Cool MOS Power Transistor Infineon Technologies
SPP20N60C3 N-Channel MOSFET INCHANGE
SPP20N60CFD Cool MOS Power Transistor Infineon Technologies
SPP20N60CFD N-Channel MOSFET INCHANGE

Other Datasheets by SYNC POWER

Part Number Description
SPP2323 Dual P-Channel MOSFET
SPP2327 P-Channel MOSFET
SPP2301 P-Channel MOSFET
SPP2301A P-Channel MOSFET
SPP2301D P-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
SPP2329 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP2329 is the P-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. The SPP2329 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS  Powered System  DC/DC Converter  Load Switch FEATURES  -150V/-1.0A, RDS(ON)=900mΩ@VGS=-10V  -150V/-1.0A, RDS(ON)=1000mΩ@VGS=-4.
Published: |