SPP20N60CFD Datasheet PDF (N-Channel MOSFET) | Download INCHANGE SPP20N60CFD

SPP20N60CFD - N-Channel MOSFET

Description

Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 20.7 IDM Drain Current-Single Pulsed 52 PD Total Dissipation @TC=25℃ 208

Features

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Static drain-source on-resistance: RDS(on) ≤0.22Ω.
Enhancement mode.
Fast Switching Speed.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

Datasheet Details

Part number	SPP20N60CFD
Manufacturer	INCHANGE
File Size	242.69 KB
Description	N-Channel MOSFET
Datasheet	SPP20N60CFD Datasheet
Additional preview pages of the SPP20N60CFD datasheet.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor SPP20N60CFD，ISPP20N60CFD ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.22Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Ultra low gate charge ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 20.7 IDM Drain Current-Single Pulsed 52 PD Total Dissipation @TC=25℃ 208 Tj Max.

Published: Oct 14, 2020 |