SPP02N60C3 Datasheet PDF - INCHANGE N-Channel MOSFET Specs

SPP02N60C3 - N-Channel MOSFET

Datasheet Summary

Description

Ultra low gate charge Ultra low effective capacitance ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 1.8 IDM Drain Current-Single Pulsed 5.4 PD Total Dissipation @TC=25℃ 2

Features

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Static drain-source on-resistance: RDS(on) ≤3Ω.
Enhancement mode.
Fast Switching Speed.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

Datasheet Details

Part number	SPP02N60C3
Manufacturer	INCHANGE
File Size	242.73 KB
Description	N-Channel MOSFET
Datasheet	SPP02N60C3 Datasheet
Additional preview pages of the SPP02N60C3 datasheet.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor SPP02N60C3，ISPP02N60C3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤3Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Ultra low gate charge ·Ultra low effective capacitance ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 1.8 IDM Drain Current-Single Pulsed 5.4 PD Total Dissipation @TC=25℃ 25 Tj Max.

Published: Oct 14, 2020 |