Datasheet4U Logo Datasheet4U.com

SPP21N50C3 - N-Channel MOSFET

Features

  • br>.
  • Static drain-source on-resistance: RDS(on) ≤190mΩ.
  • Enhancement mode.
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

Datasheet preview – SPP21N50C3

Datasheet Details

Part number SPP21N50C3
Manufacturer INCHANGE
File Size 243.17 KB
Description N-Channel MOSFET
Datasheet download datasheet SPP21N50C3 Datasheet
Additional preview pages of the SPP21N50C3 datasheet.

📁 Similar Datasheet

  • SPP21N50C3 - Power Transistor (Infineon Technologies)
  • SPP21N10 - SIPMOS Power-Transistor (Infineon Technologies)
  • SPP21N10 - SIPMOS Power-Transistor (Infineon Technologies)
  • SPP2095 - P-Channel MOSFET (SYNC Power)
  • SPP20N60C2 - Cool MOS Power Transistor (Infineon Technologies)
  • SPP20N60C3 - Cool MOS Power Transistor (Infineon Technologies)
  • SPP20N60CFD - Cool MOS Power Transistor (Infineon Technologies)
  • SPP20N60S5 - Cool MOS Power Transistor (Infineon Technologies)
  • SPP20N65C3 - Power Transistor (Infineon Technologies)
  • SPP2301 - P-Channel MOSFET (SYNC POWER)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc N-Channel MOSFET Transistor SPP21N50C3，ISPP21N50C3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤190mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·New revolutionary high voltage technology ·Ultra low effective capacitance ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 21 IDM Drain Current-Single Pulsed 63 PD Total Dissipation @TC=25℃ 208 Tj Max.
Published: |