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SPP2301A - P-Channel MOSFET

Description

The SPP2301A is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • -20V/-2.8A,RDS(ON)=130mΩ@VGS=-4.5V.
  • -20V/-2.0A,RDS(ON)=200mΩ@VGS=-2.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.
  • SOT-23-3L package design PIN.

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Datasheet preview – SPP2301A

Datasheet Details

Part number SPP2301A
Manufacturer SYNC POWER
File Size 316.56 KB
Description P-Channel MOSFET
Datasheet download datasheet SPP2301A Datasheet
Additional preview pages of the SPP2301A datasheet.

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Full PDF Text Transcription

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SPP2301A P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP2301A is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. APPLICATIONS • Power Management in Note book • Portable Equipment • Battery Powered System • DC/DC Converter • Load Switch • DSC • LCD Display inverter FEATURES  -20V/-2.8A,RDS(ON)=130mΩ@VGS=-4.5V  -20V/-2.0A,RDS(ON)=200mΩ@VGS=-2.
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