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SPP2305D - P-Channel MOSFET

Description

The SPP2305D is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • ‹ -15V/-3.5A,RDS(ON)= 70mΩ@VGS=-4.5V ‹ -15V/-3.0A,RDS(ON)= 85mΩ@VGS=-2.5V ‹ -15V/-2.0A,RDS(ON)=105mΩ@VGS=-1.8V ‹ Super high density cell design for extremely low RDS (ON) ‹ Exceptional on-resistance and maximum DC current capability ‹ SOT-23 package design PIN.

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Datasheet preview – SPP2305D

Datasheet Details

Part number SPP2305D
Manufacturer SYNC POWER
File Size 202.34 KB
Description P-Channel MOSFET
Datasheet download datasheet SPP2305D Datasheet
Additional preview pages of the SPP2305D datasheet.

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Full PDF Text Transcription

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SPP2305D P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP2305D is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. APPLICATIONS z Power Management in Note book z Portable Equipment z Battery Powered System z DC/DC Converter z Load Switch z DSC z LCD Display inverter FEATURES ‹ -15V/-3.5A,RDS(ON)= 70mΩ@VGS=-4.5V ‹ -15V/-3.0A,RDS(ON)= 85mΩ@VGS=-2.5V ‹ -15V/-2.
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