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SPP2327
P-Channel Enhancement Mode MOSFET
DESCRIPTION The SPP2327 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch Networking LED applications
FEATURES -100V/-0.6A,RDS(ON)=650mΩ@VGS=-10V -100V/-0.4A,RDS(ON)=760mΩ@VGS=-4.
SPP2327 Datasheet
