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SPP2319 - P-Channel MOSFET

Description

The SPP2319 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • -40V/-3.0A,RDS(ON)=96mΩ@VGS=-10V.
  • -40V/-2.8A,RDS(ON)=130mΩ@VGS=-4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • SOT-23-3L package design PIN.

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Datasheet Details

Part number SPP2319
Manufacturer SYNC POWER
File Size 343.04 KB
Description P-Channel MOSFET
Datasheet download datasheet SPP2319 Datasheet

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Full PDF Text Transcription

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SPP2319 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP2319 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package. APPLICATIONS  Power Management in Note book  Portable Equipment  Battery Powered System  DC/DC Converter  Load Switch  DSC  LCD Display inverter FEATURES  -40V/-3.0A,RDS(ON)=96mΩ@VGS=-10V  -40V/-2.8A,RDS(ON)=130mΩ@VGS=-4.
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