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SPP2311 - P-Channel MOSFET

Description

The SPP2311 is the P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

Features

  • P-Channel -30V/0.45A,RDS(ON)=0.65Ω@VGS=-4.5V -30V/0.35A,RDS(ON)=0.90Ω@VGS=-2.5V -30V/0.25A,RDS(ON)=1.5Ω@VGS=-1.8V -30V/0.25A,RDS(ON)=3.0Ω@VGS=-1.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.
  • ESD protected.
  • SOT-23 package design PIN.

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Datasheet Details

Part number SPP2311
Manufacturer SYNC POWER
File Size 344.51 KB
Description P-Channel MOSFET
Datasheet download datasheet SPP2311 Datasheet

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Full PDF Text Transcription

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SPP2311 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP2311 is the P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. APPLICATIONS  Drivers : Relays/Solenoids/Lamps/Hammers  Power Supply Converter Circuits  Load/Power Switching Cell Phones, Pagers FEATURES  P-Channel -30V/0.45A,RDS(ON)=0.65Ω@VGS=-4.5V -30V/0.35A,RDS(ON)=0.90Ω@VGS=-2.5V -30V/0.
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